The incorporation properties of implanted or deposited Sb into the silicon
lattice during laser irradiation with a UV laser has been studied. For both
implanted or deposited Sb, we find a maximum substitutional concentration of
2.1 × 1021/cm3 following laser melting and
solidification at V ; 6 m/sec. In both cases, substitutional solubility is
limited by inter-facial instabilities which develop during regrowth. For the
deposited case we observe in addition a much larger cellular microstructure
which may result from convection induced instabilities.